Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same

US12082414B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Jianzhong Wu · Fujian, CN
• Zongke Xu · 红钢城街道, CN
• Jingjing Geng · 红钢城街道, CN

Key dates

• Filing date: Jun 11, 2021
• Grant date: Sep 3, 2024
• Expiry date: Sep 2, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/50

Abstract

Embodiments of structures and methods for forming three-dimensional (3D) memory devices are provided. In an example, a 3D memory device includes a core region and a staircase region. The staircase region includes a plurality of stairs each has at least a conductor/dielectric pair extending in a lateral direction. The staircase region includes a drain-select-gate (DSG) cut structure extending along the lateral direction and a vertical direction, and a plurality of support structures extending in the DSG structure along the vertical direction. Of at least one of the support structures, a dimension along the lateral direction is greater than a dimension along a second lateral direction perpendicular to the lateral direction.