Semiconductor device and methods of formation
US12085751B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2022 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Jul 8, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Some implementations described herein include a photonics integrated circuit device including a photonics structure. The photonics structure includes a waveguide structure and an optical attenuator structure. In some implementation, the optical attenuator structure is formed on an end region of the waveguide structure and includes a metal material or a doped material. In some implementations, the optical attenuator structure includes a gaussian doping profile within a portion of the waveguide structure. The optical attenuator structure may absorb electromagnetic waves at the end of the waveguide structure with an efficiency that is improved relative to a spiral optical attenuator structure or metal cap optical attenuator structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.