Device for measuring density of plasma, plasma processing system, and semiconductor device manufacturing method using the same
US12087550B2 · kind B2 · utility
0Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2022 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Dec 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A device for measuring a density of plasma is provided. The device includes a first sensor configured to measure a microwave spectrum of an input port reflection parameter of plasma, the first sensor having a probe including a conductive material and a flat plate shape, and a second sensor configured to measure an optical signal generated from the plasma, the second sensor being configured to detect the optical signal through the probe of the first sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.