Through substrate via structure and manufacturing method thereof, redistribution layer structure and manufacturing method thereof
US12087665B2 · kind B2 · utility
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6References
10Claims
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Key dates
| Filing date | May 17, 2021 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | May 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A through substrate via structure and a manufacturing method thereof, and a redistribution layer structure and a manufacturing method thereof are provided. The through substrate via structure includes a columnar conductive layer and a nanotwinned metal film disposed at least around the conductive layer. In a cross-section of the through substrate via structure, relative to a total area of the conductive layer and the nanotwinned metal film, an area ratio of the nanotwinned metal film is 50% or less by area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.