Deep trench isolations and methods of forming the same
US12087801B2 · kind B2 · utility
0Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2022 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Apr 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes performing an anisotropic etching on a semiconductor substrate to form a trench. The trench has vertical sidewalls and a rounded bottom connected to the vertical sidewalls. A damage removal step is performed to remove a surface layer of the semiconductor substrate, with the surface layer exposed to the trench. The rounded bottom of the trench is etched to form a slant straight bottom surface. The trench is filled to form a trench isolation region in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.