SPAD photodiode
US12087873B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 23, 2022 |
| Grant date | Sep 10, 2024 |
| Priority date | — |
| Expiry date | Jan 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/148
Abstract
A photodiode is formed in a semiconductor substrate of a first conductivity type. The photodiode includes a first region having a substantially hemispherical shape and a substantially hemispherical core of a second conductivity type, different from the first conductivity type, within the first region. An epitaxial layer covers the semiconductor substrate and buries the first region and core.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.