Dominique Golanski
8Patents
1h-index
16Co-inventors
48Inventor score
Filing activity: Oct 26, 2001 → Feb 27, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9786755B2 | Process for producing, from an SOI and in particular an FDSOI type substrate, transistors having gate oxides of different thicknesses, and corresponding integrated circuit | Electricity | 2 | Active |
| US9876032B2 | Method of manufacturing a device with MOS transistors | Electricity | 0 | Active |
| US11581449B2 | Single-photon avalanche photodiode | Emerging Cross-Sectional Technologies | 0 | Active |
| US11949035B2 | Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method | Electricity | 0 | Active |
| US12324250B2 | Single-photon avalanche photodiode | Emerging Cross-Sectional Technologies | 0 | Active |
| US12087873B2 | SPAD photodiode | Electricity | 0 | Active |
| US7015105B2 | Method of simultaneously making a pair of transistors with insulated gates having respectively a thin oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of transistors | Electricity | 0 | Expired |
| US12324251B2 | Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.