Patent · US Active

Read-write method and apparatus for LEPS soft decoding estimation, and electronic device

US12088323B2 · kind B2 · utility

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1References
10Claims
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Key dates

Filing dateNov 25, 2020
Grant dateSep 10, 2024
Priority date
Expiry dateNov 25, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2211/5648
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A read-write method includes: sequentially writing, in a first direction, a code word obtained by information-bit encoding into a target memory cell in each layer of memory cell array in the three-dimensional memory; randomly reading the target memory cell in each layer of memory cell array, or sequentially reading the target memory cell in each layer of memory cell array in a second direction; and determining an LLR value of a current target memory cell according to a storage time corresponding to the current target memory cell when reading, a threshold voltage partition corresponding to the current target memory cell when reading, a comprehensive distribution state corresponding to the current target memory cell when reading, and a pre-established LLR table, so as to perform a soft decoding operation on the code word in the current target memory cell based on the LLR value of the current target memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.