Patent · US Active

Wafer stage and method of using

US12092958B2 · kind B2 · utility

0Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 3, 2022
Grant dateSep 17, 2024
Priority date
Expiry dateJun 3, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0274
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A wafer stage includes an area for receiving a wafer. The wafer stage further includes a first sensor outside of the area for receiving the wafer. The wafer stage further includes a second sensor outside of the area of receiving the wafer, wherein the second sensor is spaced from the first sensor. The wafer stage further includes a first particle capture area outside of the area for receiving the wafer, wherein the first particle capture area is spaced from both the first sensor and the second sensor, a dimension of the first particle capture area in a first direction parallel to a top surface of the wafer stage is at least 26 millimeters (mm), a dimension of the first particle capture area in a second direction parallel to the top surface of the wafer stage is at least 33 mm, and the second direction is perpendicular to the first direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.