Patent · US Active

Memory device, failure bits detector and failure bits detection method thereof

US12094554B2 · kind B2 · utility

0Cited by
2References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 5, 2022
Grant dateSep 17, 2024
Priority date
Expiry dateJan 27, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG05F3/262
  • WIPO fieldControl
  • WIPO sectorInstruments

Abstract

A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.