Fin field-effect transistor device and method of forming
US12094778B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2021 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Oct 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
Abstract
A method of forming a fin field-effect transistor device includes: forming a gate structure over a first fin and a second fin; forming, on a first side of the gate structure, a first recess and a second recess in the first fin and the second fin, respectively; and forming a source/drain region in the first and second recesses, which includes: forming a barrier layer in the first and second recesses; forming a first epitaxial material over the barrier layer, where a first portion of the first epitaxial material over the first fin is spaced apart from a second portion of the first epitaxial material over the second fin; forming a second epitaxial material over the first and second portions of the first epitaxial material, where the second epitaxial material extends continuously from the first fin to the second fin; and forming a capping layer over the second epitaxial material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.