Semiconductor device and method for fabricating the same
US12094783B2 · kind B2 · utility
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11References
9Claims
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Key dates
| Filing date | Jun 14, 2023 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Jun 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a fin-shaped structure thereon; forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion; forming a first gate structure on the SDB structure; forming an interlayer dielectric (ILD) layer around the first gate structure; transforming the first gate structure into a first metal gate; removing the first metal gate to form a first recess; and forming a dielectric layer in the first recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.