Method of manufacturing a semiconductor device and a semiconductor device
US12094804B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2021 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | Oct 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L24/13
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of manufacturing a semiconductor device and a semiconductor device. The method of manufacturing a semiconductor device includes: providing a substrate with trenches, and the trenches extending along a thickness direction of the substrate from a first surface of the substrate; forming a first auxiliary layer and a first conductive layer successively in the trenches, and the first conductive layer covering the first auxiliary layer; thinning the substrate on a second surface of the substrate to expose the first auxiliary layer; removing the first auxiliary layer to form first openings; forming a second medium layer on the second surface of the substrate; patterning the second medium layer to form second openings in the second medium layer, and the second openings exposing the first openings; and depositing a second initial conductive layer, the second initial conductive layer filling the first openings and the second openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.