Inventor · Hefei, CN

Zhan Ying

63Patents
3h-index
45Co-inventors
58Inventor score

Filing activity: Apr 16, 2018 → Jun 28, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US11527301B2 Method for reading and writing and memory device Physics 7 Active
US11315610B1 Sense amplifier, memory and method for controlling sense amplifier Electricity 4 Active
US11599417B2 Error correction system Physics 4 Active
US11894047B2 Sense amplifier, memory and method for controlling sense amplifier Physics 3 Active
US11887655B2 Sense amplifier, memory, and method for controlling sense amplifier by configuring structures using switches Physics 2 Active
US11820058B2 Injection mould and injection moulding method Electricity 1 Active
US11862285B2 Sense amplifier, memory and control method of sense amplifier Physics 1 Active
US11423957B2 Sense amplifier, memory and method for controlling a sense amplifier Physics 1 Active
US11854938B2 Electrostatic protection device and electrostatic protection circuit Electricity 1 Active
US11632113B2 Enable control circuit and semiconductor memory Electricity 1 Active
US12302634B2 Semiconductor structure and manufacturing method thereof Electricity 0 Active
US12193217B2 Method for forming semiconductor structure and semiconductor structure Electricity 0 Active
US12389591B2 Semiconductor structure and method for manufacturing semiconductor structure Electricity 0 Active
US11482446B1 Method for manufacturing semiconductor device and semiconductor device Electricity 0 Active
US11682466B2 One-time programmable memory read-write circuit Physics 0 Active
US11869624B2 Sense amplifier, memory and method for controlling sense amplifier Physics 0 Active
US12419105B2 Protection ring, method for forming protection ring, and semiconductor structure Electricity 0 Active
US11899971B2 Method for reading and writing and memory device Physics 0 Active
US12193218B2 Semiconductor structure and method for manufacturing semiconductor structure Electricity 0 Active
US12183585B2 Manufacturing method of semiconductor structure including complementary first and second mask patterns Electricity 0 Active
US11735279B2 Programmable memory cell, memory array and reading and writing method thereof Physics 0 Active
US12094804B2 Method of manufacturing a semiconductor device and a semiconductor device Electricity 0 Active
US11929111B2 Sense amplifier, memory and method for controlling sense amplifier Physics 0 Active
US12354941B2 Chip package structure and storage system Electricity 0 Active
US11990201B2 Storage system Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.