Semiconductor structure having deep metal line and method for forming the semiconductor structure
US12094816B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Aug 30, 2021 |
| Grant date | Sep 17, 2024 |
| Priority date | — |
| Expiry date | May 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5329
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a substrate, a dielectric layer, a first conductive feature and a second conductive feature. The substrate includes a semiconductor device. The dielectric layer is disposed on the substrate. The first conductive feature is formed in the first dielectric layer. The second conductive feature penetrates the first conductive feature and the dielectric layer, and is electrically connected to the first conductive feature and the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.