Patent · US Active

Method of manufacturing semiconductor devices by filling grooves formed in a front side surface of a wafer with a side face protection material

US12094837B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Christian Gruber · Graz, AT
Benjamin Bernard · Karlsruhe, DE
Tobias Polster · Villach, AT
Carsten von Koblinski · Velden am Wörther See, AT

Key dates

Filing date	Feb 6, 2023
Grant date	Sep 17, 2024
Priority date	—
Expiry date	Feb 6, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2221/6834
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor device includes: forming grooves in a front side surface of a wafer; filling the grooves with a first side face protection material; thinning the wafer at a backside surface of the wafer opposite the front side surface; depositing a backside metallization layer over the backside surface of the thinned wafer; and laser cutting along the grooves through the side face protection material and through the backside metallization layer to separate the wafer into multiple semiconductor devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.