Heterostructure of an electronic circuit having a semiconductor device

US12094964B2 · kind B2 · utility

Assignees

• NAMLAB GGMBH · DE
• Technische Universitaet Dresden · DE

Inventors

• Stefan Schmult · Dresden, DE
• Andre Wachowiak · Dresden, DE
• Alexander Ruf · Dresden, DE

Key dates

• Filing date: Jun 9, 2023
• Grant date: Sep 17, 2024
• Expiry date: Jun 9, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/517

Abstract

An electronic circuit having a semiconductor device is provided that includes a heterostructure, the heterostructure including a first layer of a compound semiconductor to which a second layer of a compound semiconductor adjoins in order to form a channel for a 2-dimensional electron gas (2DEG), wherein the 2-dimensional electron gas is not present. In aspects, an electronic circuit having a semiconductor device is provided that includes a III-V heterostructure, the III-V heterostructure including a first layer including GaN to which a second layer adjoins in order to form a channel for a 2-dimensional electron gas (2DEG), and having a purity such that the 2-dimensional electron gas is not present. It is therefore advantageous for the present electronic circuit to be enclosed such that, in operation, no light of wavelengths of less than 400 nm may reach the III-V heterostructure and free charge carriers may be generated by these wavelengths.