Semiconductor MPS diode with reduced current-crowding effect and manufacturing method thereof

US12094985B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Simone RASCUNÁ · Catania, IT
• Mario Giuseppe Saggio · Nettuno, IT

Key dates

• Filing date: Aug 10, 2022
• Grant date: Sep 17, 2024
• Expiry date: Aug 10, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

A merged-PN-Schottky, MPS, diode includes an N substrate, an N-drift layer, a P-doped region in the drift layer, an ohmic contact on the P-doped region, a plurality of cells within the P-doped region and being portions of the drift layer where the P-doped region is absent, an anode metallization on the ohmic contact and on said cells, to form junction-barrier contacts and Schottky contacts respectively. The P-doped region has a grid-shaped layout separating from one another each cell and defining, together with the cells, an active area of the MPS diode. Each cell has a same geometry among quadrangular, quadrangular with rounded corners and circular; and the ohmic contact extends at the doped region with continuity along the grid-shaped layout.