Build-up film with low dielectric loss, preparation method therefor and circuit substrate structure
US12098230B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2023 |
| Grant date | Sep 24, 2024 |
| Priority date | — |
| Expiry date | Nov 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/0209
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A build-up film with low dielectric loss, a preparation method therefor, and a circuit substrate structure are provided. The build-up film is prepared from raw materials including 5-10 parts by mass of monofunctional benzoxazine having indene oligomer, 40-65 parts by mass of polymerized aromatic-based maleimide, 30-50 parts by mass of allyl benzoxazine, 0.1-3 parts by mass of initiator, 250-400 parts by mass of inorganic filler, and 0.1-5 parts by mass of silane coupling agent. The build-up film has low dielectric loss and high tensile strength. Low dielectric loss enables it to be applied in the field of 5G. For example, the build-up film can be used to packaging integrated circuit substrates, which is conducive to minimizing the transmission loss.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.