Patent · US Active

Interrupt signaling for a memory device

US12099746B2 · kind B2 · utility

0Cited by

10References

13Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Markus Balb · Munich, DE
Thomas Hein · Hersbruck, DE
Heinz Hoenigschmid · Starnberg, DE

Key dates

Filing date	Dec 9, 2020
Grant date	Sep 24, 2024
Priority date	—
Expiry date	Dec 16, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG06F3/0679
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Methods, systems, and devices for interrupt signaling for a memory device are described. A memory device may transmit an interrupt signal to a host device to alter a sequence of operations that would otherwise be executed by the host device. The memory device may transmit the interrupt signal in response to detecting an error condition at the memory device, a performance degradation at the memory device, or another trigger event. In some examples, the memory device may include a dedicated interrupt pin for transmitting interrupt signals. Alternatively, the memory device may transmit interrupt signals via a pin also sued to transmit error detection codes. For example, the memory device may transmit an interrupt signal before or after an error detection code or may invert the error detection code to indicate the interrupt, in which case the inverted error detection code may act as an interrupt signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.