Patent · US Active

Image sensor structure with a light guide layer and a nanowell layer

US12100723B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

Illumina, Inc. · US

Inventors

Arvin Emadi · San Jose, US
Ali Agah · San Diego, US
Xiuyu Cai · San Diego, US
Craig Hetherington · Berkeley, US

Key dates

Filing date	Sep 29, 2020
Grant date	Sep 24, 2024
Priority date	—
Expiry date	Jan 23, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/807
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An image sensor structure including an image stack disposed over a device stack. The image stack includes a plurality of light detectors. A first optical filter stack is disposed over the image stack. The first optical filter stack includes a light guide layer. Light pipe cavities are disposed in the light guide layer. Each light pipe cavity is associated with a light detector. Each light pipe cavity has an aspect ratio that is greater than about 2.5 to about 1. A nanowell layer is disposed over the first optical filter stack. Nanowells are disposed in the nanowell layer. Each nanowell is associated with a light detector.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.