Method for producing a semiconductor component having an insulating substrate, and semiconductor component having an insulating substrate
US12100791B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 16, 2019 |
| Grant date | Sep 24, 2024 |
| Priority date | — |
| Expiry date | May 31, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor component may include applying a semiconductor chip over a first main surface of an insulating substrate, thinning a second main surface of the insulating substrate where the second main surface has a roughness of more than 300 nm after thinning, applying a smoothing metal layer over the second main surface of the insulating substrate, and smoothing the smoothing metal layer. A semiconductor component may include a semiconductor chip, an insulating substrate where the semiconductor chip is arranged over a first main surface of the insulating substrate and a second main surface of the insulating substrate has a roughness Ra of more than 300 nm, and a smoothing metal layer over the second main surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.