Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices
US12102010B2 · kind B2 · utility
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33Claims
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Key dates
| Filing date | Mar 5, 2021 |
| Grant date | Sep 24, 2024 |
| Priority date | — |
| Expiry date | Jun 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a film can include heating a CVD reactor chamber containing a substrate to a temperature range between about 750 degrees Centigrade and about 950 degrees Centigrade, providing a first precursor comprising Al to the CVD reactor chamber in the temperature range, providing a second precursor comprising Sc to the CVD reactor chamber in the temperature range, providing a third precursor comprising nitrogen to the CVD reactor chamber in the temperature range, and forming the film comprising ScAlN on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.