Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices

US12106791B2 · kind B2 · utility

Assignee

• Western Digital Technologies, Inc. · US

Inventors

• Quang Le · San Jose, US
• Brian R. York · San Jose, US
• Cherngye Hwang · San Jose, US
• Xiaoyong Liu · San Jose, US
• Michael A. Gribelyuk · Stamford, US
• Xiaoyu XU · San Jose, US
• Susumu Okamura · Fujisawa, JP
• Kuok San Ho · Emerald Hills, US
• Hisashi Takano · San Jose, US
• Randy Simmons · West Chester, US

Key dates

• Filing date: Jun 30, 2022
• Grant date: Oct 1, 2024
• Expiry date: Jan 31, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N52/80
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GeXNiFe layers, where at least one GeXNiFe layer is disposed in contact with the BiSb layer. The GeXNiFe layer has a thickness less than or equal to about 15 Å when used as an interlayer on top of the BiSb layer or less than or equal to 40 Å when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GeXNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GeXNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GeXNiFe layer allows the crystal orientation of the BiSb layer to be selected.