Nano spintronic device using spin current of ferromagnetic material and heavy metal channel
US12106879B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2021 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Jan 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3259
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A nano spintronic device for using the spin current of a ferromagnetic material and the spin current of a heavy metal channel. The device includes a lower channel layer, a free layer, a pinned layer, an insulating film layer, and an upper channel layer. When current flows upon application of power, electrons are divided into +y-polarized spins and −y-polarized spins in the lower channel layer, thereby generating torque in the free layer. The torque switches the magnetization direction of the free layer to an +y-axis direction or an −y-axis direction so that the free layer stores magnetization information according to the magnetization direction. When current flows in the upper channel layer, the current flows into the pinned layer so that electrons in the pinned layer are divided into +y-polarized spins and −y-polarized spins. The insulating layer insulates the free layer and the pinned layer from each other. When power is supplied, current flows in the upper channel layer and flows into the pinned layer, thereby inducing polarized spins in the pinned layer, resulting in the generation of torque in the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.