Inventor · Seoul, KR

Hyun Cheol Koo

20Patents
5h-index
27Co-inventors
65Inventor score

Filing activity: Dec 15, 2005 → Nov 12, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US7839675B2 Magnetic memory device and method for reading magnetic memory cell using spin hall effect Electricity 14 Active
US7608901B2 Spin transistor using stray magnetic field Emerging Cross-Sectional Technologies 10 Active
US7307299B2 Spin transistor using spin-orbit coupling induced magnetic field Electricity 9 Expired
US7994555B2 Spin transistor using perpendicular magnetization Electricity 7 Active
US8125247B2 Complementary spin transistor logic circuit Electricity 6 Active
US8775139B2 Method for simulating fluid flow and recording medium for performing the method Physics 3 Active
US8058676B2 Spin transistor using double carrier supply layer structure Electricity 3 Active
US8586964B2 P-type semiconductor device comprising type-2 quantum well and fabrication method thereof Electricity 3 Active
US7675103B2 Spin transistor using ferromagnet Electricity 2 Active
US8183611B2 Spin transistor using N-type and P-type double carrier supply layer structure Emerging Cross-Sectional Technologies 2 Active
US8421060B2 Reconfigurable logic device using spin accumulation and diffusion Electricity 2 Active
US8053851B2 Spin transistor using epitaxial ferromagnet-semiconductor junction Emerging Cross-Sectional Technologies 2 Active
US8587044B2 Complementary logic device using spin injection Electricity 1 Active
US10622490B2 Reconfigurable logic device using electrochemical potential Electricity 0 Active
US10014396B2 Spin control electronic device operable at room temperature Electricity 0 Active
US12106879B2 Nano spintronic device using spin current of ferromagnetic material and heavy metal channel Electricity 0 Active
US10998906B1 Logic device using spin torque Electricity 0 Active
US9337272B2 Ferromagnet-free spin transistor and method for operating the same Electricity 0 Active
US9099328B2 Complementary spin device having a gate, a source, a first and second drain electrode Electricity 0 Active
US9831245B1 Complementary logic device using spin-orbit interaction difference and method for manufacturing the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.