Humidity control or aqueous treatment for EUV metallic resist
US12106961B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2022 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Sep 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3081
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a semiconductor device is provided. The method includes applying a photoresist composition over a substrate, thereby forming a photoresist layer over the substrate; performing a first baking process to the photoresist layer; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation, thereby forming a pattern therein; performing a second baking process to the photoresist layer; and developing the photoresist layer having the pattern therein using a developer, thereby forming a patterned photoresist layer. The first baking process and the second baking process are conducted under an ambient atmosphere having a humidity level ranging from 55% to 100%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.