High conductive passivation layers and method of forming the same during high aspect ratio plasma etching
US12106971B2 · kind B2 · utility
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10References
15Claims
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Key dates
| Filing date | Dec 28, 2020 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Dec 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods for forming a high aspect ratio (HAR) structure during a HAR etch process in a substrate in a reaction chamber, the method comprising:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.