Method of dicing wafer forming modified layer in chucked wafer
US12107009B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2021 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Jul 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of dicing a wafer includes fixing a second portion of a wafer to a wafer chuck without fixing a first portion of the wafer to the wafer chuck and forming first modified portions in first scribe lane regions of the first portion of the wafer by sequentially laser irradiating the first scribe lane regions without the first portion of the wafer being fixed to the wafer chuck. The method also includes fixing a first portion of the wafer to the wafer chuck and unfixing the second portion of the wafer from the wafer chuck and forming second modified portions in second scribe lane regions of the second portion of the wafer by sequentially laser irradiating the second scribe lane regions without the second portion of the wafer being fixed to the wafer chuck.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.