Fin-based and bipolar electrostatic discharge devices

US12107083B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Robert J. Gauthier, Jr. · South Burlington, US
• Meng Miao · Williston, US
• Alain Loiseau · Williston, US
• Souvick Mitra · South Burlington, US
• You Li · South Burlington, US
• Wei Liang · South Burlington, US

Key dates

• Filing date: Sep 7, 2023
• Grant date: Oct 1, 2024
• Expiry date: Sep 7, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/619

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) devices and methods of manufacture. The structure (ESD device) includes: a bipolar transistor comprising a collector region, an emitter region and a base region; and a lateral ballasting resistance comprising semiconductor material adjacent to the collector region.