Read retry scratch space
US12111725B2 · kind B2 · utility
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1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 17, 2023 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Feb 17, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Devices and techniques to recover data from a memory device are disclosed, including recovering data corresponding to a detected error in data stored on a memory array corresponding to a memory operation using one of a set of read offset values and loading the one of the set of read offset values used to recover data corresponding to the detected error in a temporary storage of the memory array as a custom read offset value for a subsequent memory operation. The temporary storage of the memory array can include a scratch space of the memory array separate from read retry offset registers of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.