Patent · US Active

Persistent xSPI STT-MRAM with optional erase operation

US12112067B2 · kind B2 · utility

0Cited by
2References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 9, 2022
Grant dateOct 8, 2024
Priority date
Expiry dateAug 9, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/1697
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The present disclosure is drawn to, among other things, a method for programming a memory device comprising a plurality of memory arrays. The method may include receiving a command to program one or more of the plurality of memory arrays and programming the one or more of the plurality of memory arrays based on the command. The method may optionally include erasing the one or more of the plurality of memory arrays prior to the programming.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.