Read destructive memory wear leveling system
US12112821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2022 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Jun 21, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0409
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data storage system can utilize one or more data storage devices that employ a solid-state non-volatile read destructive memory consisting of ferroelectric memory cells. A leveling strategy can be generated by a wear module connected to the memory with the leveling strategy prescribing a plurality of memory cell operating parameters associated with different amounts of cell wear. The wear module may monitor activity of a memory cell and detect an amount of wear in the memory cell as a result of the monitored activity, which can prompt changing a default set of operating parameters for the memory cell to a first stage of operating parameters, as prescribed by the leveling strategy, in response to the detected amount of wear.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.