Method for improving deposition process
US12112930B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2019 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Apr 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.