Preparation method of GaN field effect transistor based on diamond substrate

US12112944B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Yuangang Wang · Nanhu, CN
• Shaobo Dun · Shijiazhuang, CN
• Yuanjie Lv · Shijiazhuang, CN
• Xingchang Fu · Shijiazhuang, CN
• Shixiong Liang · Sichuan, CN
• Xubo Song · Shijiazhuang, CN
• Hongyu Guo · Shenyang, CN
• Zhihong Feng · Shijiazhuang, CN

Key dates

• Filing date: Apr 25, 2022
• Grant date: Oct 8, 2024
• Expiry date: Jun 30, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/254
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The disclosure provides a preparation method of GaN field effect transistor based on diamond substrate, and relates to the technical field of semiconductor manufacturing. The method includes the following steps: preparing a GaN heterojunction layer on the front-side of a SiC substrate; thinning the SiC substrate; etching the SiC substrate; growing a diamond layer; removing a sacrificial layer and the diamond layer on the sacrificial layer; preparing a source electrode, a drain electrode and a gate electrode on the front surface of the GaN heterojunction layer; etching the SiC substrate and the GaN heterojunction layer to form a source through hole communicated with the source electrode; and removing the through hole mask layer, and preparing back grounding metal to complete the preparation of the diamond substrate GaN transistor device.