Deposition of highly crystalline 2D materials
US12112946B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Feb 22, 2022 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Jul 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for providing a film of one or more monolayers of transition metal dichalcogenides on a substrate is disclosed. The method includes providing a substrate; depositing at least one monolayer of the transition metal dichalcogenides on the substrate; and selectively removing superficial islands on top of the at least one monolayer by thermal etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.