Matty Caymax
25Patents
8h-index
37Co-inventors
75Inventor score
Filing activity: Mar 27, 1998 → Feb 22, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7579285B2 | Atomic layer deposition method for depositing a layer | Electricity | 447 | Active |
| US6194722A | Method of fabrication of an infrared radiation detector and infrared detector device | Emerging Cross-Sectional Technologies | 101 | Expired |
| US6884636B2 | Method of fabrication of an infrared radiation detector and infrared detector device | Emerging Cross-Sectional Technologies | 19 | Expired |
| US7075081B2 | Method of fabrication of an infrared radiation detector and infrared detector device | Emerging Cross-Sectional Technologies | 16 | Expired |
| US7320896B2 | Infrared radiation detector | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7176111B2 | Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6683367B1 | Thin-film opto-electronic device and a method of making it | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6274462A | Method of fabrication of an infrared radiation detector and infrared detector device | Emerging Cross-Sectional Technologies | 9 | Expired |
| US8007865B2 | Atomic layer deposition (ALD) method and reactor for producing a high quality layer | Electricity | 8 | Active |
| US8507337B2 | Method for doping semiconductor structures and the semiconductor device thereof | Electricity | 3 | Active |
| US9425314B2 | Passivated III-V or Ge fin-shaped field effect transistor | Electricity | 3 | Active |
| US9218964B2 | Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof | Electricity | 2 | Active |
| US8962369B2 | Method for doping semiconductor structures and the semiconductor device thereof | Electricity | 2 | Active |
| US8232581B2 | Method for manufacturing an III-V engineered substrate and the III-V engineered substrate thereof | Emerging Cross-Sectional Technologies | 2 | Active |
| US9028623B2 | Oxygen monolayer on a semiconductor | Electricity | 1 | Active |
| US8912055B2 | Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby | Electricity | 0 | Active |
| US9196477B2 | Semiconductor device and method | Electricity | 0 | Active |
| US8530339B2 | Method for direct deposition of a germanium layer | Electricity | 0 | Active |
| US6815247B2 | Thin-film opto-electronic device and a method of making it | Emerging Cross-Sectional Technologies | 0 | Expired |
| US8709918B2 | Method for selective deposition of a semiconductor material | Electricity | 0 | Active |
| US8158451B2 | Method for manufacturing a junction | Electricity | 0 | Active |
| US9431519B2 | Method of producing a III-V fin structure | Electricity | 0 | Active |
| US9984874B2 | Method of producing transition metal dichalcogenide layer | Electricity | 0 | Active |
| US12112946B2 | Deposition of highly crystalline 2D materials | Electricity | 0 | Active |
| US8865582B2 | Method for producing a floating gate memory structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.