Memory devices including strings of memory cells, and related electronic systems
US12113019B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2022 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Dec 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A microelectronic device comprises pillar structures extending vertically through an isolation material, conductive lines electrically coupled to the pillar structures, contact structures between the pillar structures and the conductive lines, and interconnect structures between the conductive lines and the contact structures. The conductive lines comprise one or more of titanium, ruthenium, aluminum, and molybdenum. The interconnect structures comprise a material composition that is different than one or more of a material composition of the contact structures and a material composition of the conductive lines. Related memory devices, electronic systems, and methods are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.