Metal bonding structure and manufacturing method thereof
US12113042B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Oct 6, 2021 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Jan 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.