Nitride semiconductor device with field effect gate
US12113110B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 3, 2021 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | May 10, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
Abstract
A nitride semiconductor device having a field effect gate is disclosed. The disclosed nitride semiconductor device includes a high-resistance material layer including a Group III-V compound semiconductor, a first channel control layer on the high-resistance material layer and including a Group III-V compound semiconductor of a first conductivity type, a channel layer on the channel layer control layer and including a nitride semiconductor of a second conductivity type opposite to the first conductivity type, and a gate electrode having a contact of an ohmic contact type with the first channel control layer.
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