Inventor · Phoenix, AZ, US

Woochul Jeon

30Patents
3h-index
25Co-inventors
59Inventor score

Filing activity: Mar 16, 2011 → Feb 24, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8735941B2 Nitride based semiconductor device and method for manufacturing the same Electricity 8 Active
US10741682B2 High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance Electricity 4 Active
US9842920B1 Gallium nitride semiconductor device with isolated fingers Electricity 4 Active
US8614464B2 Nitride-based semiconductor device and method for manufacturing the same Electricity 2 Active
US10937781B1 Electronic device including a protection circuit Electricity 2 Active
US10749019B2 Circuit and electronic device including an enhancement-mode transistor Electricity 1 Active
US10069002B2 Bond-over-active circuity gallium nitride devices Electricity 1 Active
US9947654B2 Electronic device including a transistor and a field electrode Electricity 1 Active
US10312359B2 Guard rings for cascode gallium nitride devices Electricity 1 Active
US10854718B2 Method of forming a semiconductor device Electricity 1 Active
US10797153B2 Process of forming an electronic device including an access region Electricity 1 Active
US12426294B2 High electron mobility transistor Electricity 0 Active
US8450826B2 Nitride based semiconductor device Electricity 0 Active
US9741711B2 Cascode semiconductor device structure and method therefor Electricity 0 Active
US11769807B2 Lateral transistor with extended source finger contact Electricity 0 Active
US8445891B2 Nitride based semiconductor device and method for manufacturing the same Electricity 0 Active
US9754931B2 Circuit and an integrated circuit including a transistor and another component coupled thereto Electricity 0 Active
US10978581B2 Guard rings for cascode gallium nitride devices Electricity 0 Active
US10217737B2 Cascode semiconductor device structure and method therefor Electricity 0 Active
US10741653B2 Bond-over-active circuity gallium nitride devices Electricity 0 Active
US12113110B2 Nitride semiconductor device with field effect gate Emerging Cross-Sectional Technologies 0 Active
US9966462B2 Guard rings for cascode gallium nitride devices Electricity 0 Active
US12317536B2 Semiconductor device and power switching system including the same Electricity 0 Active
US9985022B2 Electronic device including a cascode circuit having principal drive and bypass transistors Electricity 0 Active
US10707203B2 Cascode semiconductor device structure and method therefor Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.