Bipolar transistor having collector with doping concentration discontinuity

US12113125B2 · kind B2 · utility

Assignee

• Skyworks Solutions, Inc. · US

Inventors

• Kai Hay Kwok · Burlington, US
• Cristian Cismaru · Tustin, US
• Andre Metzger · Village of La Jolla, US
• Guoliang Zhou · Walpole, US

Key dates

• Filing date: Jun 29, 2022
• Grant date: Oct 8, 2024
• Expiry date: Sep 8, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85

Abstract

This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having increased collector thickness for improved ruggedness. In some embodiments, the collector thickness can be above 1.1 microns. The collector can have at least one doping concentration grading. The collector can have a high doping concentration at a junction between the collector and the sub-collector, such as at the high end of the grading. In some embodiments, the high doping concentration can be above about 9×1016 cm−3. The collector can include a region with high doping concentration adjacent the base. The collector can include a discontinuity in the doping concentration, such as at the low end of the grading. Such bipolar transistors can be implemented, for example, in power amplifiers.