Active bootstrapping drivers
US12113524B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2022 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Dec 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit to enhance the driving capability of conventional inverting bootstrapping GaN drivers. When the inverting driver input is logic high and the driver output is off, the voltage stored on the first bootstrap capacitor for turning on the high side (pull-up) FET of the inverting driver is charged to the full supply voltage using an active charging FET, instead of using a diode or diode-connected FET in a conventional bootstrapping driver. The gate voltage of the active charging FET is bootstrapped to a voltage higher than supply voltage by a second bootstrap capacitor that connects to the inverting driver input, which is at a logic high. The second bootstrap capacitor is charged by an additional diode or diode-connected FET connected to the supply voltage when the inverting driver input is a logic low.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.