Phase-change memory cell
US12114580B2 · kind B2 · utility
0Cited by
18References
18Claims
0Family size
Inventors
Key dates
| Filing date | Apr 21, 2023 |
| Grant date | Oct 8, 2024 |
| Priority date | — |
| Expiry date | Apr 21, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/008
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.