Self-stopping polishing composition and method for high topological selectivity
US12116502B2 · kind B2 · utility
0Cited by
2References
25Claims
0Family size
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Key dates
| Filing date | Dec 21, 2021 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Jan 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from a ceria abrasive, a zirconia abrasive, and a combination thereof; (b) a self-stopping agent selected from a compound of formula (I), (c) optionally a nonionic polymer; (d) a cationic monomer compound; and (e) water, wherein the polishing composition has a pH of about 5.5 to about 8. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide and optionally polysilicon, using said composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.