Substrate processing apparatus and method of manufacturing semiconductor device
US12116666B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2018 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Jan 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67772
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein is a technique capable of shortening the time required to reduce the oxygen concentration in a transfer chamber. According to the technique described herein, there is provided a substrate processing apparatus including: a transfer chamber wherein a substrate from a container is transported; a transfer robot configured to transfer the substrate through the transfer chamber; a purge gas supply mechanism configured to supply a purge gas into the transfer chamber; and a pressure control mechanism configured to control an inner pressure of the transfer chamber wherein the pressure control mechanism is provided at an exhaust channel wherethrough an inner atmosphere of the transfer chamber is exhausted, the pressure control mechanism including: an exhaust damper configured to fully open or fully close the exhaust channel; and an adjusting damper provided in the exhaust damper and configured to maintain the inner pressure of the transfer chamber at predetermined pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.