Group III nitride single crystal substrate and method for production thereof
US12116697B2 · kind B2 · utility
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Key dates
| Filing date | Dec 24, 2020 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Feb 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0254
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A group III nitride single crystal substrate comprises: a first main face; and a first back face opposite to the first main face, wherein an absolute value of a radius of curvature of the first main face of the substrate is 10 m or more; an absolute value of a radius of curvature of a crystal lattice plane at a center of the first main face of the substrate is 10 m or more; and a 1/1000 intensity width of an X-ray rocking curve of a low-incidence-angle face at the center of the first main face of the substrate is 1200 arcsec or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.