Method of programming MLC memory device and related MLC memory device
US12119053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2022 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Sep 16, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
When programming an MLC memory device, the disturb characteristics of a program block having multiple memory cells are measured, and the threshold voltage variations of the multiple memory cells are then acquired based on the disturb characteristics of the program block. Next, multiple initial program voltage pulses are provided according to a predetermined signal level, and multiple compensated program voltage pulses are provided by adjusting the multiple initial program voltage pulses. Last, the multiple compensated program voltage pulses are outputted to the program block for programming the multiple memory cells to the predetermined signal level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.