Contact structure formation for memory devices

US12120963B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Lili Cheng · Rexford, US
• Ashim Dutta · Clifton Park, US
• Chih-Chao Yang · Glenmont, US

Key dates

• Filing date: Sep 24, 2021
• Grant date: Oct 15, 2024
• Expiry date: Jun 30, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/22

Abstract

A semiconductor structure comprises a bottom electrode contact, and a memory device comprising a bottom electrode disposed on the bottom electrode contact, at least one memory element layer disposed on the bottom electrode, and a top electrode disposed on the at least one memory element layer. A bit line contact is disposed on the top electrode and extends around sides of the memory device and of the bottom electrode contact. An encapsulation layer is disposed between the bit line contact and the sides of the memory device and of the bottom electrode contact.