Patent · US Active

Substrate processing apparatus and method of manufacturing semiconductor device

US12123091B2 · kind B2 · utility

0Cited by
9References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 28, 2022
Grant dateOct 22, 2024
Priority date
Expiry dateSep 28, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67739
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A technique for reducing cooling time for a substrate includes a substrate processing apparatus that may include: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism to supply the gas into an upper region of the transfer chamber. The substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism to supply the gas into a lower region of the transfer chamber. The heat-insulating unit is provided such that the gas flows downward through the lower region. The first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.